Invention Grant
- Patent Title: Memory circuits having a plurality of keepers
- Patent Title (中): 存储电路具有多个保持器
-
Application No.: US13786103Application Date: 2013-03-05
-
Publication No.: US08830782B2Publication Date: 2014-09-09
- Inventor: Annie Lum , Derek C. Tao , Young Seog Kim
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C11/413 ; G11C11/412 ; G11C5/14 ; G11C7/12

Abstract:
A circuit including a memory circuit, the memory circuit includes a first plurality of memory arrays and a first plurality of keepers, each keeper of the first plurality of keepers is electrically coupled with a corresponding one of the first plurality of memory arrays. The memory circuit further includes a first current limiter electrically coupled with and shared by the first plurality of keepers.
Public/Granted literature
- US20130182512A1 MEMORY CIRCUITS HAVING A PLURALITY OF KEEPERS Public/Granted day:2013-07-18
Information query