Invention Grant
- Patent Title: Edge emitting semiconductor laser chip
- Patent Title (中): 边缘发射半导体激光芯片
-
Application No.: US13127887Application Date: 2009-10-21
-
Publication No.: US08831061B2Publication Date: 2014-09-09
- Inventor: Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
- Applicant: Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102008058436 20081121
- International Application: PCT/DE2009/001482 WO 20091021
- International Announcement: WO2010/057455 WO 20100527
- Main IPC: H01S5/42
- IPC: H01S5/42 ; H01S5/12 ; H01S5/042 ; H01S5/40 ; H01S5/22 ; H01S5/10 ; H01S5/022 ; H01S5/20 ; H01S5/065

Abstract:
An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.
Public/Granted literature
- US20110243169A1 Edge Emitting Semiconductor Laser Chip Public/Granted day:2011-10-06
Information query