Invention Grant
US08831333B2 Mask pattern analysis apparatus and method for analyzing mask pattern
有权
用于分析掩模图案的掩模图案分析装置和方法
- Patent Title: Mask pattern analysis apparatus and method for analyzing mask pattern
- Patent Title (中): 用于分析掩模图案的掩模图案分析装置和方法
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Application No.: US13495873Application Date: 2012-06-13
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Publication No.: US08831333B2Publication Date: 2014-09-09
- Inventor: Kuo Kuei Fu
- Applicant: Kuo Kuei Fu
- Applicant Address: TW Tao-Yuan Hsien
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Tao-Yuan Hsien
- Agency: Bacon & Thomas PLLC
- Agent Juan Carlos A. Marquez
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
A pattern analysis method includes the steps of: grouping a plurality of polygons in a circuit layout into a plurality of polygon groups; locating a potential defect area of each polygon group according to an aerial image of the circuit layout; determining a representing point of the potential defect area of each polygon group; determining representing points of the plurality of polygons in each polygon group; and comparing a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in one of the polygon groups with a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in another of the polygon groups. The steps aforesaid are executed by a processor in a computer system.
Public/Granted literature
- US20130336571A1 MASK PATTERN ANALYSIS APPARATUS AND METHOD FOR ANALYZING MASK PATTERN Public/Granted day:2013-12-19
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