Invention Grant
US08832408B2 Non-volatile memory array partitioning architecture and method to utilize single level cells and multi-level cells within the same memory
有权
非易失性存储器阵列分区体系结构和方法利用同一个存储器内的单级单元和多级单元
- Patent Title: Non-volatile memory array partitioning architecture and method to utilize single level cells and multi-level cells within the same memory
- Patent Title (中): 非易失性存储器阵列分区体系结构和方法利用同一个存储器内的单级单元和多级单元
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Application No.: US11928865Application Date: 2007-10-30
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Publication No.: US08832408B2Publication Date: 2014-09-09
- Inventor: Hagop Nazarian , Ali Pourkeramati
- Applicant: Hagop Nazarian , Ali Pourkeramati
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C16/08 ; G11C11/56
Abstract:
A memory device is disclosed, and includes an array of memory cells and a partitioning system configured to address a first portion of the array in a single level cell mode, and a second portion of the array in a multi-level cell mode.
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