Invention Grant
US08832526B2 Data reading method, memory controller, and memory storage device
有权
数据读取方法,存储器控制器和存储器存储设备
- Patent Title: Data reading method, memory controller, and memory storage device
- Patent Title (中): 数据读取方法,存储器控制器和存储器存储设备
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Application No.: US13190487Application Date: 2011-07-26
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Publication No.: US08832526B2Publication Date: 2014-09-09
- Inventor: Chien-Fu Tseng , Kuo-Hsin Lai
- Applicant: Chien-Fu Tseng , Kuo-Hsin Lai
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW100119408A 20110602
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; H03M13/00 ; G11C29/50 ; G11C29/02 ; G11C29/04 ; H03M13/15 ; H03M13/29

Abstract:
A data reading method adapted to a rewritable non-volatility memory module having physical blocks is provided, wherein each physical block has a plurality of physical pages. In the data reading method, each physical page is partitioned into bit data areas, where at least one of the bit data areas has a data length different from that of the other bit data areas. Data is written into the bit data areas. Data in each bit data area is corresponding to an ECC frame. The data is read from the bit data areas. Because the at least one of bit data areas has a relatively short data length, the error correction capability is improved and the data can be correctly read. An error bit information is obtained according to the read data. A log likelihood ratio (LLR) lookup table or a threshold voltage is adjusted according to the error bit information.
Public/Granted literature
- US20120311402A1 DATA READING METHOD, MEMORY CONTROLLER, AND MEMORY STORAGE DEVICE Public/Granted day:2012-12-06
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