Invention Grant
US08832607B2 Method for making correction map of dose amount, exposure method, and method for manufacturing semiconductor device
有权
制造剂量的校正图,曝光方法和制造半导体器件的方法的方法
- Patent Title: Method for making correction map of dose amount, exposure method, and method for manufacturing semiconductor device
- Patent Title (中): 制造剂量的校正图,曝光方法和制造半导体器件的方法的方法
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Application No.: US13598736Application Date: 2012-08-30
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Publication No.: US08832607B2Publication Date: 2014-09-09
- Inventor: Takashi Koike , Hiroyuki Mizuno , Yosuke Okamoto
- Applicant: Takashi Koike , Hiroyuki Mizuno , Yosuke Okamoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-065750 20120322
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/00 ; G03F7/20

Abstract:
According to one embodiment, a method for making a correction map of a dose amount of EUV light used when exposing with the EUV light, includes estimating an exposure result based on an initial correction map of the dose amount and flare of the EUV light, determining a goodness of the exposure result, and correcting the initial correction map in the case where the exposure result is unacceptable. And, the correcting of the initial correction map, the estimating of the exposure result, and the determining of the goodness are repeated until the exposure result is good.
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