Invention Grant
- Patent Title: Double patterning by PTD and NTD process
- Patent Title (中): 通过PTD和NTD过程进行双重图案化
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Application No.: US13617540Application Date: 2012-09-14
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Publication No.: US08835100B2Publication Date: 2014-09-16
- Inventor: Chin Cheng Yang
- Applicant: Chin Cheng Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Alston & Bird LLP
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method of manufacturing using a double patterning method is provided. The double patterning method uses a first developer and a second developer that are different. For example, the first developer may be a positive tone developer for a positive photoresist while the second developer may be a negative tone developer for the positive photoresist. Photoresists having a photoactive compound are also provided that may be useful in double patterning methods.
Public/Granted literature
- US20140080069A1 DOUBLE PATTERNING BY PTD AND NTD PROCESS Public/Granted day:2014-03-20
Information query
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