Invention Grant
US08835207B2 Method of manufacturing a semiconductor integrated circuit device having a MEMS element
有权
制造具有MEMS元件的半导体集成电路器件的方法
- Patent Title: Method of manufacturing a semiconductor integrated circuit device having a MEMS element
- Patent Title (中): 制造具有MEMS元件的半导体集成电路器件的方法
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Application No.: US13750615Application Date: 2013-01-25
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Publication No.: US08835207B2Publication Date: 2014-09-16
- Inventor: Koichi Arai
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Womble Carlyle
- Priority: JP2012-016091 20120130
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B81C1/00 ; B81C3/00 ; H01L29/84 ; H01L23/48 ; B81B3/00
Abstract:
In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer.
Public/Granted literature
- US20130193536A1 METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A MEMS ELEMENT Public/Granted day:2013-08-01
Information query
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