Invention Grant
- Patent Title: Oxide semiconductor thin film transistor and method for manufacturing the same
- Patent Title (中): 氧化物半导体薄膜晶体管及其制造方法
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Application No.: US13905140Application Date: 2013-05-30
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Publication No.: US08835236B2Publication Date: 2014-09-16
- Inventor: Hsi-Ming Chang
- Applicant: Chunghwa Picture Tubes, Ltd.
- Applicant Address: TW Taoyuan
- Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee Address: TW Taoyuan
- Agency: CKC & Partners Co., Ltd.
- Priority: TW102105386U 20130208
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/336 ; H01L29/12 ; H01L27/12 ; H01L29/66 ; H01L29/786
Abstract:
A method for manufacturing an oxide semiconductor thin film transistor (TFT) is provided, which includes the steps below. A source electrode and a drain electrode are provided. A patterned insulating layer is formed to partially cover the source electrode and the drain electrode, and expose a portion of the source electrode and a portion of the drain electrode. An oxide semiconductor layer is formed to contact the portion of the source electrode and the portion of the drain electrode. A gate electrode is provided. A gate dielectric layer positioned between the oxide semiconductor layer and the gate electrode is provided. An oxide semiconductor TFT is also provided herein.
Public/Granted literature
- US20140225194A1 OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-08-14
Information query
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