Invention Grant
- Patent Title: Semiconductor nanostructures, semiconductor devices, and methods of making same
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Application No.: US14156006Application Date: 2014-01-15
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Publication No.: US08835238B2Publication Date: 2014-09-16
- Inventor: Joerg Appenzeller , Supratik Guha , Emanuel Tutuc
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/02 ; H01L21/306

Abstract:
A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.
Public/Granted literature
- US20140127888A1 SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME Public/Granted day:2014-05-08
Information query
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