Sensor array and a method of manufacturing the same

Invention Grant

US08835247B2 Sensor array and a method of manufacturing the same 有权

Title translation: 传感器阵列及其制造方法

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Patent Title: Sensor array and a method of manufacturing the same
Patent Title (中): 传感器阵列及其制造方法
Application No.: US12992113

Application Date: 2009-05-11
Publication No.: US08835247B2

Publication Date: 2014-09-16
Inventor: Michel De Langen , Ger Reuvers , Frans Meeuwsen
Applicant: Michel De Langen , Ger Reuvers , Frans Meeuwsen
Applicant Address: NL Eindhoven
Assignee: NXP, B.V.
Current Assignee: NXP, B.V.
Current Assignee Address: NL Eindhoven
Priority: EP08103938 20080513
International Application: PCT/IB2009/051922 WO 20090511
International Announcement: WO2009/138939 WO 20091119
Main IPC: H01L21/8242
IPC: H01L21/8242 ; G01N21/64 ; B01J19/00 ; B01L3/00

Sensor array and a method of manufacturing the same

Abstract:

A sensor array for detecting particles, the sensor array comprising a substrate having a plurality of holes, a plurality of electronic sensor chips each having a sensor active region being sensitive to the presence of particles to be detected, and an electric contacting structure adapted for electrically contacting the plurality of electronic sensor chips, wherein the plurality of electronic sensor chips and/or the electric contacting structure are connected to the substrate in such a manner that the plurality of holes in combination with the plurality of electronic sensor chips and/or the electric contacting structure form a plurality of wells with integrated particle sensors.

Abstract(Chinese):

一种用于检测颗粒的传感器阵列，所述传感器阵列包括具有多个孔的基底，多个电子传感器芯片，每个电子传感器芯片各自具有对要检测的颗粒的存在敏感的传感器有源区域，以及电接触结构，接触多个电子传感器芯片，其中多个电子传感器芯片和/或电接触结构以与多个电子传感器芯片和/或电气传感器芯片组合的多个孔的方式连接到基板接触结构形成具有集成的颗粒传感器的多个孔。

Public/Granted literature

US20110062531A1 SENSOR ARRAY AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-03-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）