Techniques for fabricating metal lines in semiconductor systems are disclosed. The metal may be tungsten. A hybrid Chemical Vapor Deposition (CVD)/Physical Vapor Deposition (PVD) process may be used. A layer of tungsten may be formed using CVD. This CVD layer may be formed over a barrier layer, such as, but not limited to, TiN or WN. This CVD layer may completely fill some feature such as a trench or via. Then, a layer of tungsten may be formed over the CVD layer using PVD. The layers of tungsten may then be etched to form a wire or line. Techniques for forming metal wires using a hybrid CVD/PVD process may provide for low resistivity with a barrier metal, low surface roughness, and good gap filling.