Invention Grant
- Patent Title: Method and structure for compound semiconductor contact
- Patent Title (中): 化合物半导体接触的方法和结构
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Application No.: US13085511Application Date: 2011-04-13
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Publication No.: US08835266B2Publication Date: 2014-09-16
- Inventor: Norma E. Sosa Cortes , Edward W. Kiewra , Masaharu Kobayashi , Kuen-Ting Shiu
- Applicant: Norma E. Sosa Cortes , Edward W. Kiewra , Masaharu Kobayashi , Kuen-Ting Shiu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel Schnurmann
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/417

Abstract:
The present disclosure provides a buried channel semiconductor structure in which a crystallographic wet etch is used to tailor the profile of etched regions formed into a multilayered substrate which includes a compound semiconductor layer located atop a buried semiconductor channel material layer. The use of crystallographic wet etching on a compound semiconductor allows one to tailor the shape of a source recess region and a drain recess region formed into a multilayered substrate. This allows for the control of gate overlap/underlap. Also, the use of crystallographic wet etching on a compound semiconductor allows independent control of the length of an underlying buried semiconductor channel region.
Public/Granted literature
- US20120261718A1 Method And Structure For Compound Semiconductor Contact Public/Granted day:2012-10-18
Information query
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