Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13248319Application Date: 2011-09-29
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Publication No.: US08835267B2Publication Date: 2014-09-16
- Inventor: Yen-Ru Lee , Ming-Hua Yu , Tze-Liang Lee , Chii-Horng Li , Pang-Yen Tsai , Lilly Su , Yi-Hung Lin , Yu-Hung Cheng
- Applicant: Yen-Ru Lee , Ming-Hua Yu , Tze-Liang Lee , Chii-Horng Li , Pang-Yen Tsai , Lilly Su , Yi-Hung Lin , Yu-Hung Cheng
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L29/78 ; H01L29/66
Abstract:
A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of a substrate to enhance carrier mobility and upgrade the device performance. In an embodiment, the improved formation method is achieved using an etching process to redistribute the strained material by removing at least a portion of the corner to be located in the cavity.
Public/Granted literature
- US20130084682A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2013-04-04
Information query
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