Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13421729Application Date: 2012-03-15
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Publication No.: US08835268B2Publication Date: 2014-09-16
- Inventor: Gaku Sudo
- Applicant: Gaku Sudo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2011-197323 20110909
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L21/336 ; H01L27/22 ; H01L29/66 ; H01L21/8234
Abstract:
A method for manufacturing a semiconductor device includes forming a mask film on a partial region of a semiconductor substrate; forming a mask member above the semiconductor substrate in both the region where the mask film is formed and a region where the mask film is not formed; patterning the mask film and an upper portion of the semiconductor substrate by performing etching using the mask member as a mask. The method further includes removing part of the patterned upper portion of the semiconductor substrate by performing etching using the patterned mask film as a mask.
Public/Granted literature
- US20130065326A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-03-14
Information query
IPC分类:
