Invention Grant
- Patent Title: Method for manufacturing semiconductor substrate
- Patent Title (中): 半导体衬底的制造方法
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Application No.: US12964141Application Date: 2010-12-09
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Publication No.: US08835276B2Publication Date: 2014-09-16
- Inventor: Syouji Nogami , Tomonori Yamaoka , Shoichi Yamauchi , Nobuhiro Tsuji , Toshiyuki Morishita
- Applicant: Syouji Nogami , Tomonori Yamaoka , Shoichi Yamauchi , Nobuhiro Tsuji , Toshiyuki Morishita
- Applicant Address: JP Tokyo JP Aichi
- Assignee: Sumco Corporation,Denso Corporation
- Current Assignee: Sumco Corporation,Denso Corporation
- Current Assignee Address: JP Tokyo JP Aichi
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2005-293087 20051006; JP2006-214551 20060807
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/544 ; H01L29/06 ; H01L29/66 ; H01L21/02
Abstract:
A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N+-type substrate. This trench is used to leave voids after the formation of an N−-type layer. Then, the voids formed in the N+-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.
Public/Granted literature
- US20110076830A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE Public/Granted day:2011-03-31
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