Invention Grant
- Patent Title: Controlled process and resulting device
- Patent Title (中): 控制过程和结果设备
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Application No.: US13743303Application Date: 2013-01-16
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Publication No.: US08835282B2Publication Date: 2014-09-16
- Inventor: Francois J. Henley , Nathan Cheung
- Applicant: Silicon Genesis Corporation
- Applicant Address: US CA San Jose
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/425 ; H01L21/18 ; H01L21/223 ; H01L21/762 ; H01L21/20 ; H01L21/268 ; H01L21/304 ; H01L21/78 ; H01L21/265
Abstract:
A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
Public/Granted literature
- US20130143389A1 CONTROLLED PROCESS AND RESULTING DEVICE Public/Granted day:2013-06-06
Information query
IPC分类:
