Invention Grant
- Patent Title: Method of implanting a workpiece to improve growth of a compound semiconductor
- Patent Title (中): 植入工件以改善化合物半导体生长的方法
-
Application No.: US13468744Application Date: 2012-05-10
-
Publication No.: US08835287B2Publication Date: 2014-09-16
- Inventor: Ludovic Godet , Morgan D. Evans
- Applicant: Ludovic Godet , Morgan D. Evans
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/266 ; H01L21/223 ; H01L29/267 ; H01L21/265
Abstract:
A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines, which may be a grid, a series of circles, or other shapes. The distance between certain pairs of lines may be different across the workpiece.
Public/Granted literature
- US20120286285A1 METHOD OF IMPLANTING A WORKPIECE TO IMPROVE GROWTH OF A COMPOUND SEMICONDUCTOR Public/Granted day:2012-11-15
Information query
IPC分类:
