Invention Grant
- Patent Title: Wafer backside defectivity clean-up utilizing selective removal of substrate material
- Patent Title (中): 使用选择性去除衬底材料来晶片背面缺陷清理
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Application No.: US13916098Application Date: 2013-06-12
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Publication No.: US08835289B2Publication Date: 2014-09-16
- Inventor: Jennifer C. Clark , Emily R. Kinser , Ian D. Melville , Candace A. Sullivan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Catherine Ivers
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L23/544 ; H01L21/306 ; H01L21/02
Abstract:
A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
Public/Granted literature
- US20130273743A1 WAFER BACKSIDE DEFECTIVITY CLEAN-UP UTILIZING SELECTIVE REMOVAL OF SUBSTRATE MATERIAL Public/Granted day:2013-10-17
Information query
IPC分类:
