Invention Grant
- Patent Title: Methods for forming conductive elements and vias on substrates
- Patent Title (中): 在基板上形成导电元件和通孔的方法
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Application No.: US13430167Application Date: 2012-03-26
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Publication No.: US08835293B2Publication Date: 2014-09-16
- Inventor: Rickie C. Lake
- Applicant: Rickie C. Lake
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L21/48

Abstract:
Methods of forming conductive elements on and in a substrate include forming a layer of conductive material over a surface of a substrate prior to forming a plurality of vias through the substrate from an opposing surface of the substrate to the layer of conductive material. In some embodiments, a temporary carrier may be secured to the layer of conductive material on a side thereof opposite the substrate prior to forming the vias. Structures, including workpieces formed using such methods, are also disclosed.
Public/Granted literature
- US20120175341A1 METHODS FOR FORMING CONDUCTIVE ELEMENTS AND VIAS ON SUBSTRATES Public/Granted day:2012-07-12
Information query
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