Fabricating method of non-volatile memory structure

Invention Grant

US08835297B2 Fabricating method of non-volatile memory structure 有权

Title translation: 非易失性存储器结构的制作方法

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Patent Title: Fabricating method of non-volatile memory structure
Patent Title (中): 非易失性存储器结构的制作方法
Application No.: US13750606

Application Date: 2013-01-25
Publication No.: US08835297B2

Publication Date: 2014-09-16
Inventor: Chih-Chieh Cheng , Shih-Guei Yan , Wen-Jer Tsai
Applicant: MACRONIX International Co., Ltd.
Applicant Address: TW Hsinchu
Assignee: MACRONIX International Co., Ltd.
Current Assignee: MACRONIX International Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: J.C. Patents
Main IPC: H01L21/3205
IPC: H01L21/3205

Fabricating method of non-volatile memory structure

Abstract:

A fabricating method for fabricating a non-volatile memory structure including the following steps is provided. A first conductive type doped layer is formed in a substrate. A plurality of stacked structures is formed on the substrate, and each of the stacked structures includes a charge storage structure. A first dielectric layer is formed on the substrate between the adjacent stacked structures. A second conductive type doped region is formed in the substrate between the adjacent charge storage structures. The second conductive type doped region has an overlap region with each of the charge storage structures. In addition, the second conductive type doped region divides the first conductive type doped layer into a plurality of first conductive type doped regions that are separated from each other. A conductive layer is formed on the first dielectric layer.

Abstract(Chinese):

提供一种用于制造包括以下步骤的非易失性存储器结构的制造方法。在衬底中形成第一导电型掺杂层。在基板上形成多个堆叠结构，并且每个堆叠结构都包括电荷存储结构。在相邻的层叠结构之间的基板上形成第一电介质层。在相邻的电荷存储结构之间的衬底中形成第二导电型掺杂区。第二导电型掺杂区域与每个电荷存储结构具有重叠区域。此外，第二导电型掺杂区域将第一导电类型掺杂层划分成彼此分离的多个第一导电型掺杂区域。在第一电介质层上形成导电层。

Public/Granted literature

US20140209992A1 FABRICATING METHOD OF NON-VOLATILE MEMORY STRUCTURE Public/Granted day:2014-07-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）