Forming nickel—platinum alloy self-aligned silicide contacts

Invention Grant

US08835309B2 Forming nickel—platinum alloy self-aligned silicide contacts 有权

Title translation: 形成镍 - 铂合金自对准硅化物触点

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Patent Title: Forming nickel—platinum alloy self-aligned silicide contacts
Patent Title (中): 形成镍 - 铂合金自对准硅化物触点
Application No.: US13613579

Application Date: 2012-09-13
Publication No.: US08835309B2

Publication Date: 2014-09-16
Inventor: David F. Hilscher , Christian Lavoie , Ahmet S. Ozcan
Applicant: David F. Hilscher , Christian Lavoie , Ahmet S. Ozcan
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Catherine Ivers
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/44 ; H01L31/00 ; H01L23/48

Forming nickel—platinum alloy self-aligned silicide contacts

Abstract:

A method of performing a silicide contact process comprises a forming a nickel-platinum alloy (NiPt) layer over a semiconductor device structure; performing a first rapid thermal anneal (RTA) so as to react portions of the NiPt layer in contact with semiconductor regions of the semiconductor device structure, thereby forming metal rich silicide regions; performing a first wet etch to remove at least a nickel constituent of unreacted portions of the NiPt layer; performing a second wet etch using a dilute Aqua Regia treatment comprising nitric acid (HNO3), hydrochloric acid (HCl) and water (H2O) to remove any residual platinum material from the unreacted portions of the NiPt layer; and following the dilute Aqua Regia treatment, performing a second RTA to form final silicide contact regions from the metal rich silicide regions.

Abstract(Chinese):

执行硅化物接触工艺的方法包括在半导体器件结构上形成镍 - 铂合金（NiPt）层; 执行第一快速热退火（RTA），以使NiPt层的与半导体器件结构的半导体区域接触的部分反应，由此形成富金属硅化物区域; 执行第一湿蚀刻以去除至少NiPt层的未反应部分的镍组分; 使用包含硝酸（HNO 3），盐酸（HCl）和水（H 2 O）的稀释Aqua Regia处理进行第二次湿蚀刻以从NiPt层的未反应部分去除任何残余的铂材料; 并且在稀释的Aqua Regia处理之后，执行第二个RTA从富金属硅化物区形成最终的硅化物接触区。

Public/Granted literature

US20140073130A1 FORMING NICKEL-PLATINUM ALLOY SELF-ALIGNED SILICIDE CONTACTS Public/Granted day:2014-03-13

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）