Ni and Pt residuals are eliminated by replacing an SPM cleaning process with application of HNO3 in an SWC tool. Embodiments include depositing a layer of Ni/Pt on a semiconductor substrate, annealing the deposited Ni/Pt layer, removing unreacted Ni from the annealed Ni/Pt layer by applying HNO3 to the annealed Ni/Pt layer in an SWC tool, annealing the Ni removed Ni/Pt layer, and removing unreacted Pt from the annealed Ni removed Ni/Pt layer. Embodiments include forming first and second gate electrodes on a substrate, spacers on opposite sides of each gate electrode, and Pt-containing NiSi on the substrate adjacent each spacer, etching back the spacers, forming a tensile strain layer over the first gate electrode, applying a first HNO3 in an SWC tool, forming a compressive strain layer over the second gate electrode, and applying a second HNO3 in an SWC tool.