Invention Grant
- Patent Title: Etching method and device
- Patent Title (中): 蚀刻方法和装置
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Application No.: US13807550Application Date: 2011-04-19
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Publication No.: US08835320B2Publication Date: 2014-09-16
- Inventor: Toshihisa Ozu
- Applicant: Toshihisa Ozu
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2010-147357 20100629
- International Application: PCT/JP2011/059587 WO 20110419
- International Announcement: WO2012/002027 WO 20120105
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/8238 ; H01J37/32 ; H01L29/66 ; H01L21/3065 ; H01L29/78 ; H01L21/768
Abstract:
An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.
Public/Granted literature
- US20130102157A1 ETCHING METHOD AND DEVICE Public/Granted day:2013-04-25
Information query
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