Invention Grant
- Patent Title: Film deposition method
- Patent Title (中): 膜沉积法
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Application No.: US13726731Application Date: 2012-12-26
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Publication No.: US08835332B2Publication Date: 2014-09-16
- Inventor: Hitoshi Kato , Tatsuya Tamura , Takeshi Kumagai
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2011-285850 20111227
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/30 ; C23C14/00 ; H01L21/762
Abstract:
A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.
Public/Granted literature
- US20130164942A1 FILM DEPOSITION METHOD Public/Granted day:2013-06-27
Information query
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