Invention Grant
US08835697B2 Biphenyl derivative, resist bottom layer material, bottom layer forming method, and patterning process
有权
联苯衍生物，抗蚀底层材料，底层形成方法和图案化工艺
- Patent Title: Biphenyl derivative, resist bottom layer material, bottom layer forming method, and patterning process
- Patent Title (中): 联苯衍生物，抗蚀底层材料，底层形成方法和图案化工艺
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Application No.: US13424455Application Date: 2012-03-20
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Publication No.: US08835697B2Publication Date: 2014-09-16
- Inventor: Daisuke Kori , Takeshi Kinsho , Katsuya Takemura , Tsutomu Ogihara , Takeru Watanabe , Hiroyuki Urano
- Applicant: Daisuke Kori , Takeshi Kinsho , Katsuya Takemura , Tsutomu Ogihara , Takeru Watanabe , Hiroyuki Urano
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-069703 20110328
- Main IPC: C07C39/17
- IPC: C07C39/17 ; G03F7/09 ; C09D161/12
Abstract:
A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.
Public/Granted literature
- US20120252218A1 BIPHENYL DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS Public/Granted day:2012-10-04
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