Invention Grant
- Patent Title: Zinc oxide photoelectrodes and methods of fabrication
- Patent Title (中): 氧化锌光电极和制造方法
-
Application No.: US11963757Application Date: 2007-12-21
-
Publication No.: US08835756B2Publication Date: 2014-09-16
- Inventor: Yicheng Lu , Aurelien Du Pasquier , Hanhong Chen
- Applicant: Yicheng Lu , Aurelien Du Pasquier , Hanhong Chen
- Applicant Address: US NJ New Brunswick
- Assignee: Rutgers, The State University of New Jersey
- Current Assignee: Rutgers, The State University of New Jersey
- Current Assignee Address: US NJ New Brunswick
- Agency: Fox Rothschild LLP
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; C23C16/40 ; H01G9/20 ; H01L51/42 ; B82Y10/00 ; H01L51/44 ; H01L31/18 ; H01L51/00

Abstract:
A substrate-supported photoelectrode, which includes an essentially two-dimensional transparent conductive oxide (TCO) film supported by a substrate, wherein the film is doped with at least one element of Group III, and one or more single crystal essentially one-dimensional nanostructures that are integral with the film and grown upwardly therefrom without a boundary layer therebetween, wherein the film and the nanostructures are essentially identical in composition and include zinc oxide or a zinc oxide alloy. Methods for preparing the substrate-supported photoelectrode and solar cells incorporating the substrate-supported photoelectrode are also provided.
Public/Granted literature
- US20080149171A1 Zinc Oxide Photoelectrodes and Methods of Fabrication Public/Granted day:2008-06-26
Information query
IPC分类: