Invention Grant
- Patent Title: Laser irradiation apparatus and method for manufacturing semiconductor device
- Patent Title (中): 激光照射装置及半导体装置的制造方法
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Application No.: US11389508Application Date: 2006-03-27
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Publication No.: US08835800B2Publication Date: 2014-09-16
- Inventor: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-096212 20050329
- Main IPC: B23K26/00
- IPC: B23K26/00 ; H01L21/44 ; H01L27/12 ; B23K26/08 ; B23K26/04 ; G02B26/10 ; B23K26/073 ; G02B27/09

Abstract:
The present invention provides a laser irradiation apparatus which can accurately control positions of beam spots of laser beams emitted from laser oscillators and the distance between the adjacent beam spots. A laser irradiation apparatus of the present invention includes a first movable stage with an irradiation body provided, two or more laser oscillators emitting laser beams, a plurality of second movable stages with the laser oscillators and optical systems provided, and a means for detecting at least one alignment maker. The first stage and the second stages may move not only in one direction but also in a plurality of directions. Further, the optical systems are to shape the laser beams emitted from the laser oscillators into linear beams on the irradiation surface.
Public/Granted literature
- US20060252261A1 Laser irradiation apparatus and method for manufacturing semiconductor device Public/Granted day:2006-11-09
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