Invention Grant
- Patent Title: Image sensor formed by silicon rich oxide material
- Patent Title (中): 由富硅氧化物材料形成的图像传感器
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Application No.: US13671541Application Date: 2012-11-07
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Publication No.: US08835829B2Publication Date: 2014-09-16
- Inventor: Ming-Hung Chuang
- Applicant: AU Optronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: AU Optronics Corp.
- Current Assignee: AU Optronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW98124077A 20090716
- Main IPC: H01J40/14
- IPC: H01J40/14 ; H01L27/00 ; H01L27/146 ; H04N5/374 ; H04N5/3745

Abstract:
An image sensor includes a light-sensing element, a first transistor, and a second transistor. The light-sensing element has a first end and a second end electrically connected to a select line. The first transistor has a first end electrically connected to a first control line, a control end electrically connected to the first end, and a second end electrically connected to the first end of the light-sensing element. The second transistor has a first end electrically connected to a voltage source, a control end electrically connected to the first end of the light-sensing element, and a second end electrically connected to an output line. The light-sensing element uses the material of silicon rich oxide so that the light-sensing element can sense the luminance variance and have the characteristic of the capacitor for the level boost.
Public/Granted literature
- US20130062509A1 IMAGE SENSOR Public/Granted day:2013-03-14
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