Invention Grant
- Patent Title: Transistor structure
- Patent Title (中): 晶体管结构
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Application No.: US13709065Application Date: 2012-12-10
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Publication No.: US08835913B2Publication Date: 2014-09-16
- Inventor: Chia-Chun Yeh , Henry Wang , Yao-Chou Tsai , Sung-Hui Huang
- Applicant: E Ink Holdings Inc.
- Applicant Address: TW Hsinchu
- Assignee: E Ink Holdings Inc.
- Current Assignee: E Ink Holdings Inc.
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., Ltd.
- Priority: TW99131063A 20100914
- Main IPC: H01L51/10
- IPC: H01L51/10 ; H01L27/28 ; H01L51/00
Abstract:
A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.
Public/Granted literature
- US20130099220A1 Transistor Structure Public/Granted day:2013-04-25
Information query
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