Invention Grant
- Patent Title: Solid-state image sensor
- Patent Title (中): 固态图像传感器
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Application No.: US13909954Application Date: 2013-06-04
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Publication No.: US08835981B2Publication Date: 2014-09-16
- Inventor: Amane Oishi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JPP2012-146871 20120629
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/028 ; H04N5/369

Abstract:
According to embodiments of the present invention, a solid-state image sensor has a semiconductor element substrate having a plurality of photo electric conversion elements, an interlaminar insulating film having wires, formed at a first surface of the semiconductor element substrate, a color filter having a plurality of dye films of a plurality of colors, formed at a second surface of the semiconductor element substrate, a micro lens array having a plurality of micro lenses, formed above the color filter, a plurality of inner lenses formed between the photoelectric conversion elements and the dye films, and a shroud that surrounds each of the inner lenses, formed above the second surface of the semiconductor element substrate.
Public/Granted literature
- US20140002700A1 SOLID-STATE IMAGE SENSOR Public/Granted day:2014-01-02
Information query
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