Invention Grant
US08835981B2 Solid-state image sensor 有权
固态图像传感器

Solid-state image sensor
Abstract:
According to embodiments of the present invention, a solid-state image sensor has a semiconductor element substrate having a plurality of photo electric conversion elements, an interlaminar insulating film having wires, formed at a first surface of the semiconductor element substrate, a color filter having a plurality of dye films of a plurality of colors, formed at a second surface of the semiconductor element substrate, a micro lens array having a plurality of micro lenses, formed above the color filter, a plurality of inner lenses formed between the photoelectric conversion elements and the dye films, and a shroud that surrounds each of the inner lenses, formed above the second surface of the semiconductor element substrate.
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