Invention Grant
- Patent Title: Gate-all-around integrated circuit devices
- Patent Title (中): 全能集成电路器件
-
Application No.: US13411699Application Date: 2012-03-05
-
Publication No.: US08835993B2Publication Date: 2014-09-16
- Inventor: Eun-jung Yun , Sung-young Lee , Min-sang Kim , Sung-min Kim
- Applicant: Eun-jung Yun , Sung-young Lee , Min-sang Kim , Sung-min Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR2005-79958 20050830
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/423

Abstract:
Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the channel region.
Public/Granted literature
- US20120161247A1 Gate-All-Around Integrated Circuit Devices and Methods of Manufacturing the Same Public/Granted day:2012-06-28
Information query
IPC分类: