A CMOS pixel is disclosed. The CMOS pixel includes a semiconductor substrate; a sense node formed in the semiconductor substrate and positioned substantially in the center of the CMOS pixel; a transfer gate formed about the sense node; and at least one photodiode formed about the transfer gate. A reset transistor, a source follower transistor, and a row select transistor are located substantially to one side of the CMOS pixel substantially adjacent to the photodiode. The sense node is operable to be floating. An implant may be formed about the photodiode configured to step potential in a direction toward the sense node.