Invention Grant
- Patent Title: Memory array
- Patent Title (中): 内存阵列
-
Application No.: US12862020Application Date: 2010-08-24
-
Publication No.: US08836005B2Publication Date: 2014-09-16
- Inventor: I-Chen Yang , Yao-Wen Chang , Tao-Cheng Lu
- Applicant: I-Chen Yang , Yao-Wen Chang , Tao-Cheng Lu
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/115 ; H01L21/768 ; H01L29/423 ; H01L21/28
Abstract:
A memory array includes a charge storage structure and a plurality of conductive materials over the charge storage structure is provided. Each conductive material, serving as a word line, has a substantially arc-sidewall and a substantially straight sidewall.
Public/Granted literature
- US20100314680A1 MEMORY ARRAY Public/Granted day:2010-12-16
Information query
IPC分类:
