Invention Grant
- Patent Title: Superjunction structures for power devices and methods of manufacture
- Patent Title (中): 功率器件的超结构和制造方法
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Application No.: US13095690Application Date: 2011-04-27
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Publication No.: US08836028B2Publication Date: 2014-09-16
- Inventor: Joseph A. Yedinak , Mark L. Rinehimer , Praveen Muraleedharan Shenoy , Jaegil Lee , Dwayne S. Reichl , Harold Heidenreich
- Applicant: Joseph A. Yedinak , Mark L. Rinehimer , Praveen Muraleedharan Shenoy , Jaegil Lee , Dwayne S. Reichl , Harold Heidenreich
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/06 ; H01L29/40
Abstract:
In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.
Public/Granted literature
- US20120273884A1 Superjunction Structures for Power Devices and Methods of Manufacture Public/Granted day:2012-11-01
Information query
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