Invention Grant
US08836030B2 Methods of forming memory cells, memory cells, and semiconductor devices 有权
形成存储单元,存储单元和半导体器件的方法

Methods of forming memory cells, memory cells, and semiconductor devices
Abstract:
A memory device and method of making the memory device. Memory device may include a storage transistor at a surface of a substrate. The storage transistor comprises a body portion between first and second source/drain regions, wherein the source/drain regions are regions of a first conductivity type. The storage transistor also comprises a gate structure that wraps at least partially around the body portion in at least two spatial planes. A bit line is connected to the first source/drain region and a word line is connected to the gate structure.
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