Invention Grant
US08836030B2 Methods of forming memory cells, memory cells, and semiconductor devices
有权
形成存储单元,存储单元和半导体器件的方法
- Patent Title: Methods of forming memory cells, memory cells, and semiconductor devices
- Patent Title (中): 形成存储单元,存储单元和半导体器件的方法
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Application No.: US13285638Application Date: 2011-10-31
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Publication No.: US08836030B2Publication Date: 2014-09-16
- Inventor: Chandra V. Mouli , Gurtej S. Sandhu
- Applicant: Chandra V. Mouli , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L31/04
- IPC: H01L31/04 ; H01L29/32 ; H01L29/78 ; H01L21/265 ; G11C11/404 ; H01L29/165 ; B82Y10/00 ; H01L27/12 ; H01L29/66 ; H01L27/108

Abstract:
A memory device and method of making the memory device. Memory device may include a storage transistor at a surface of a substrate. The storage transistor comprises a body portion between first and second source/drain regions, wherein the source/drain regions are regions of a first conductivity type. The storage transistor also comprises a gate structure that wraps at least partially around the body portion in at least two spatial planes. A bit line is connected to the first source/drain region and a word line is connected to the gate structure.
Public/Granted literature
- US20120043611A1 METHODS OF FORMING MEMORY CELLS, MEMORY CELLS, AND SEMICONDUCTOR DEVICES Public/Granted day:2012-02-23
Information query
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