Invention Grant
US08836042B2 Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel
有权
包括IGBT和具有并联连接的开关和常通型MOSFET的恒压电路的半导体器件
- Patent Title: Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel
- Patent Title (中): 包括IGBT和具有并联连接的开关和常通型MOSFET的恒压电路的半导体器件
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Application No.: US12539339Application Date: 2009-08-11
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Publication No.: US08836042B2Publication Date: 2014-09-16
- Inventor: Katsunori Ueno
- Applicant: Katsunori Ueno
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2008-207480 20080811
- Main IPC: H01L27/06
- IPC: H01L27/06 ; F02P11/02 ; H03K17/082 ; H01L29/08 ; H01L29/06 ; H01L27/088 ; F02P3/05 ; H01L29/739 ; H03K17/0812
Abstract:
A semiconductor device includes an IGBT, a constant voltage circuit, and protection Zener diodes. The IGBT makes/breaks a low-voltage current flowing in a primary coil. The constant voltage circuit and the protection Zener diodes are provided between an external gate terminal and an external collector terminal. The constant voltage circuit supplies a constant gate voltage to the IGBT to thereby set a saturation current value of the IGBT to a predetermined limiting current value. The IGBT has the saturation current value in a limiting current value range of the semiconductor device.
Public/Granted literature
- US20100059028A1 SEMICONDUCTOR DEVICE AND INTERNAL COMBUSTION ENGINE IGNITION DEVICE Public/Granted day:2010-03-11
Information query
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