Invention Grant
US08836045B2 Cross-coupled transistor circuit having diffusion regions of common node on opposing sides of same gate electrode track
有权
交叉耦合晶体管电路，具有在相同栅电极轨道的相对侧上的公共节点的扩散区域
- Patent Title: Cross-coupled transistor circuit having diffusion regions of common node on opposing sides of same gate electrode track
- Patent Title (中): 交叉耦合晶体管电路，具有在相同栅电极轨道的相对侧上的公共节点的扩散区域
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Application No.: US13831717Application Date: 2013-03-15
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Publication No.: US08836045B2Publication Date: 2014-09-16
- Inventor: Scott T. Becker , Jim Mali , Carole Lambert
- Applicant: Tela Innovations, Inc.
- Applicant Address: US CA Los Gatos
- Assignee: Tela Innovations, Inc.
- Current Assignee: Tela Innovations, Inc.
- Current Assignee Address: US CA Los Gatos
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
A first gate level feature forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second gate level feature forms a gate electrode of a second transistor of the first transistor type. A third gate level feature forms a gate electrode of a second transistor of the second transistor type. The gate electrodes of the second transistors of the first and second transistor types are electrically connected to each other. The gate electrodes of the second transistors of the first and second transistor types are positioned on opposite sides of a gate electrode track along which the gate electrodes of the first transistors of the first and second transistor types are positioned.
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