Invention Grant
US08836046B2 Semiconductor devices including protruding insulation portions between active fins
有权
半导体器件包括活性鳍片之间的突出绝缘部分
- Patent Title: Semiconductor devices including protruding insulation portions between active fins
- Patent Title (中): 半导体器件包括活性鳍片之间的突出绝缘部分
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Application No.: US14021465Application Date: 2013-09-09
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Publication No.: US08836046B2Publication Date: 2014-09-16
- Inventor: Shigenobu Maeda , Hee-Soo Kang , Sang-Pil Sim , Soo-Hun Hong
- Applicant: Shigenobu Maeda , Hee-Soo Kang , Sang-Pil Sim , Soo-Hun Hong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0138132 20121130
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/417 ; H01L29/66
Abstract:
A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.
Public/Granted literature
- US20140151810A1 SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS Public/Granted day:2014-06-05
Information query
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