Invention Grant
- Patent Title: Semiconductor system including a schottky diode
- Patent Title (中): 包括肖特基二极管的半导体系统
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Application No.: US13382982Application Date: 2010-06-09
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Publication No.: US08836072B2Publication Date: 2014-09-16
- Inventor: Ning Qu , Alfred Goerlach
- Applicant: Ning Qu , Alfred Goerlach
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE102009028252 20090805
- International Application: PCT/EP2010/058060 WO 20100609
- International Announcement: WO2011/015393 WO 20110210
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown.
Public/Granted literature
- US20120241897A1 SEMICONDUCTOR SYSTEM INCLUDING A SCHOTTKY DIODE Public/Granted day:2012-09-27
Information query
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