Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13419882Application Date: 2012-03-14
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Publication No.: US08836075B2Publication Date: 2014-09-16
- Inventor: Kyoichi Suguro
- Applicant: Kyoichi Suguro
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2011-205078 20110920
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8238 ; H01L21/762
Abstract:
According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate.
Public/Granted literature
- US20130069195A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2013-03-21
Information query
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