Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13050071Application Date: 2011-03-17
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Publication No.: US08836076B2Publication Date: 2014-09-16
- Inventor: Jun Nagayama
- Applicant: Jun Nagayama
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-145003 20100625
- Main IPC: H01L27/112
- IPC: H01L27/112 ; G11C17/14 ; G11C17/16 ; G11C17/18 ; H01L27/06 ; H01L27/10
Abstract:
A semiconductor device includes a memory element including a stack structure stacking an insulator film and a metal film or a metal compound film; and a transistor including a gate structure having an identical stack structure as that of the memory element.
Public/Granted literature
- US20110317467A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-12-29
Information query
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