The present disclosure involves a semiconductor device. The semiconductor device includes a substrate having a horizontal surface. The semiconductor device includes an interconnect structure formed over the horizontal surface of the substrate. The interconnect structure includes an inductor coil that is wound substantially in a vertical plane that is orthogonal to the horizontal surface of the substrate. The interconnect structure includes a capacitor disposed proximate to the inductor coil. The capacitor has an anode component and a cathode component. The inductor coil and the capacitor each include a plurality of horizontally extending elongate members.