Invention Grant
- Patent Title: Semiconductor unit
- Patent Title (中): 半导体单元
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Application No.: US13954464Application Date: 2013-07-30
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Publication No.: US08836103B2Publication Date: 2014-09-16
- Inventor: Shinsuke Nishi , Shogo Mori , Yuri Otobe , Naoki Kato
- Applicant: Kabushiki Kaisha Toyota Jidoshokki
- Applicant Address: JP Aichi
- Assignee: Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee: Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee Address: JP Aichi
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-173023 20120803
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor unit includes an insulation layer, a conductive layer bonded to one side of the insulation layer, a semiconductor device mounted on the conductive layer, a cooler thermally coupled to the other side of the insulation layer, a first bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the first bus bar other than the bonding surface, and a second bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the second bus bar other than the bonding surface. The second bus bar has a greater ratio of the area of the bonding surface to the area of the non-bonding surface than the first bus bar. The second bus bar has a lower electric resistance than the first bus bar.
Public/Granted literature
- US20140035120A1 SEMICONDUCTOR UNIT Public/Granted day:2014-02-06
Information query
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