Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13692286Application Date: 2012-12-03
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Publication No.: US08836106B2Publication Date: 2014-09-16
- Inventor: Masato Numazaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-263744 20111201
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/31

Abstract:
In a QFN that includes a die pad, a semiconductor chip mounted on the die pad, a plurality of leads arranged around the semiconductor chip, a plurality of wires that electrically connect the plurality of electrode pads of the semiconductor chip with the plurality of leads, respectively, and a sealing member sealing the semiconductor chip and the plurality of wires, first and second step portions are formed at shifted positions on the left and right sides of each of the leads to make the positions of the first and second step portions shifted between the adjacent leads. As a result, the gap between the leads is narrowed, thereby achieving the miniaturization or the increase in the number of pins of the QFN.
Public/Granted literature
- US20130140714A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-06-06
Information query
IPC分类: