Invention Grant
- Patent Title: Charge pump systems and methods
- Patent Title (中): 电荷泵系统和方法
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Application No.: US13726522Application Date: 2012-12-24
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Publication No.: US08836411B2Publication Date: 2014-09-16
- Inventor: Hieu Van Tran , Sang Thanh Nguyen , Nasrin Jaffari , Hung Quoc Nguyen , Anh Ly
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: G05F1/62
- IPC: G05F1/62 ; H02M3/18 ; G05F3/02 ; H02M3/07 ; H02M1/32

Abstract:
Digital multilevel memory systems and methods include a charge pump for generating regulated high voltages for various memory operations. The charge pump may include a plurality of pump stages. Aspects of exemplary systems may include charge pumps that performs orderly charging and discharging at low voltage operation conditions. Additional aspects may include features that enable state by state pumping, for example, circuitry that avoids cascaded short circuits among pump stages. Each pump stage may also include circuitry that discharges its nodes, such as via self-discharge through associated pump interconnection(s). Further aspects may also include features that: assist power-up in the various pump stages, double voltage, shift high voltage levels, provide anti-parallel circuit configurations, and/or enable buffering or precharging features, such as self-buffering and self-precharging circuitry.
Public/Granted literature
- US20130187707A1 Charge Pump Systems and Methods Public/Granted day:2013-07-25
Information query
IPC分类: