Invention Grant
- Patent Title: Robust initialization with phase change memory cells in both configuration and array
- Patent Title (中): 配置和阵列中具有相变存储单元的稳健初始化
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Application No.: US13869082Application Date: 2013-04-24
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Publication No.: US08837211B2Publication Date: 2014-09-16
- Inventor: Ryan Jurasek
- Applicant: Being Advanced Memory Corporation
- Agent Gwendolyn S. S. Groover; Robert O. Groover, III; Seth A. Horwitz
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
The present application discloses phase-change memory architectures and methods, in which an additional test is performed, after the normal power-valid signal, to assure that the phase-change memory components which are used for storing configuration data are able to operate correctly. Surprisingly, the inventor has discovered that this additional test is highly desirable when using phase-change memory for configuration data.
Public/Granted literature
- US20130336049A1 Robust Initialization with Phase Change Memory Cells in Both Configuration and Array Public/Granted day:2013-12-19
Information query
