Invention Grant
- Patent Title: Semiconductor memory device which stores multilevel data
- Patent Title (中): 存储多级数据的半导体存储器件
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Application No.: US13836914Application Date: 2013-03-15
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Publication No.: US08837213B2Publication Date: 2014-09-16
- Inventor: Noboru Shibata
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Holtz Holtz Goodman & Chick PC
- Priority: JP2012-103645 20120427
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/12 ; G11C16/26 ; G11C11/56

Abstract:
According to one embodiment, a semiconductor memory device includes a memory cell, a flag memory cell for a flag, a dummy cell and a controller. The flag memory cell is selected at the same time as the memory cell. The dummy cell is selected at the same time as the memory cell and the flag memory cell. The controller controls write and read of the memory cell, the flag memory cell and the dummy cell. Data is written also in the dummy cell which neighbors the flag cell.
Public/Granted literature
- US20130286730A1 SEMICONDUCTOR MEMORY DEVICE WHICH STORES MULTILEVEL DATA Public/Granted day:2013-10-31
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