Invention Grant
US08837246B2 Memory device, operation method thereof and memory system having the same
有权
存储器件，其操作方法和具有该存储器件的存储器系统
- Patent Title: Memory device, operation method thereof and memory system having the same
- Patent Title (中): 存储器件，其操作方法和具有该存储器件的存储器系统
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Application No.: US13803520Application Date: 2013-03-14
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Publication No.: US08837246B2Publication Date: 2014-09-16
- Inventor: Ki Heung Kim , In Chul Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0063916 20120614
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/402 ; G11C11/406
Abstract:
A memory refresh method includes selecting at least one bank from among N banks of a memory device, and activating K word lines from among a plurality of word lines included in the at least one bank during one of L refresh cycles of a refresh period. Each of the N banks comprises M word lines, N, K and M are each a natural number greater than or equal to two, L is a natural number less than or equal to M, and K is equal to M*N/L.
Public/Granted literature
- US20130336079A1 MEMORY DEVICE, OPERATION METHOD THEREOF AND MEMORY SYSTEM HAVING THE SAME Public/Granted day:2013-12-19
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