Invention Grant
US08837547B2 Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition
有权
具有InGaAs势垒层的InGaAs量子阱的激光器具有降低的分解
- Patent Title: Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition
- Patent Title (中): 具有InGaAs势垒层的InGaAs量子阱的激光器具有降低的分解
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Application No.: US13423826Application Date: 2012-03-19
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Publication No.: US08837547B2Publication Date: 2014-09-16
- Inventor: Ralph H. Johnson , Jerome K. Wade
- Applicant: Ralph H. Johnson , Jerome K. Wade
- Applicant Address: US CA Sunnyvale
- Assignee: Finisar Corporation
- Current Assignee: Finisar Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Maschoff Brennan
- Main IPC: H01S5/34
- IPC: H01S5/34 ; B82Y20/00 ; H01S5/343 ; H01S5/00 ; H01S5/183
Abstract:
A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.
Public/Granted literature
- US20120236892A1 LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION Public/Granted day:2012-09-20
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